Datasheet IRF7832TRPBF (Infineon) - 4
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF7832PbF 100000 6 VGS = 0V, f = 1 MHZ ID= 16A Ciss = Cgs + Cgd, Cds SHORTED C ) V rss = Cgd 5 V DS= 24V ( C V oss = Cds + Cgd e DS= 15V ) ga F t 10000 l p o 4 (e V c e n c a r t C i iss u c o 3 a S p - a ot C - , 1000 et 2 C C a oss G , S Crss G 1 V 100 0 1 10 100 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 ) A (Α ( t 100 t n n e e r r r r 100 u u C C ni TJ = 150°C e a c r r 10 u D 100µsec o e S s - r T o e J = 25°C t- v ni 10 e a R r , 1 D 1msec D , I S I D Tc = 25°C Tj = 150°C VGS = 0V Single Pulse 10msec 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 V V SD , Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 ) A (Α ( t 100 t n n e e r r r r 100 u u C C ni TJ = 150°C e a c r r 10 u D 100µsec o e S s - r T o e J = 25°C t- v ni 10 e a R r , 1 D 1msec D , I S I D Tc = 25°C Tj = 150°C VGS = 0V Single Pulse 10msec 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 V V SD , Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com