Datasheet IRF7832TRPBF (Infineon) - 5
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 5 — Fig 9. Fig 10. Fig 11 |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
Fig 9. Fig 10. Fig 11
该数据表的模型线
文件文字版本
IRF7832PbF 24 2.5 ) V 20 ( egat 2.0 ) l A o ( 16 V t n dl er o r h u s ID = 250µA C 12 e r 1.5 n h ia T r e D ta , 8 G I D , )h 1.0 t(S 4 GV 0 0.5 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T TC , Case Temperature (°C) J , Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Threshold Voltage Vs. Temperature Case Temperature 100 D = 0.50 ) A 10 J 0.20 ht Z 0.10 ( e 0.05 sno 1 p 0.02 seR 0.01 lamre 0.1 h T SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Threshold Voltage Vs. Temperature Case Temperature 100 D = 0.50 ) A 10 J 0.20 ht Z 0.10 ( e 0.05 sno 1 p 0.02 seR 0.01 lamre 0.1 h T SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5