Datasheet SQD50N06-07L (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 9 / 3 — SQD50N06-07L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer. … |
| 文件格式/大小 | PDF / 161 Kb |
| 文件语言 | 英语 |
SQD50N06-07L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer. Characteristics. Transconductance. Capacitance
该数据表的模型线
文件文字版本
SQD50N06-07L
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 120 120 100 100 V = 10 V thru 4 V GS ) (A ) 80 (A 80 rrent u rrent u C 60 60 n C n rai T = 25 °C D rai C - D 40 - I D 40 I D 20 V = 3 V 20 GS T = 125 °C T = - 55 °C C C 0 0 0 3 6 9 12 15 0 1 2 3 4 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
1.2 150 T = - 55 °C C 1.0 120 ) S ) e ( T = 25 °C C 0.8 (A nc a 90 rrent T = 125 °C C u 0.6 C n conduct T = 25 °C s rai C n 60 D ra - 0.4 I D -T fsg 30 0.2 T = 125 °C T = - 55 °C C C 0.0 0 0 1 2 3 4 5 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) I - Drain Current (A) D GS
Transfer Characteristics Transconductance
0.025 6000 5000 C 0.020 iss ) (pF) 4000 tance (Ω 0.015 is s e 3000 -R n 0.010 V = 4.5 V apacitance -O GS C ) n 2000 (o C - S DR 0.005 V = 10 V GS 1000 Coss C 0.000 rss 0 0 20 40 60 80 100 0 10 20 30 40 50 60 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Capacitance On-Resistance vs. Drain Current
S11-2046-Rev. C, 24-Oct-11
3
Document Number: 69099 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 120 120 100 100 V = 10 V thru 4 V GS ) (A ) 80 (A 80 rrent u rrent u C 60 60 n C n rai T = 25 °C D rai C - D 40 - I D 40 I D 20 V = 3 V 20 GS T = 125 °C T = - 55 °C C C 0 0 0 3 6 9 12 15 0 1 2 3 4 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
1.2 150 T = - 55 °C C 1.0 120 ) S ) e ( T = 25 °C C 0.8 (A nc a 90 rrent T = 125 °C C u 0.6 C n conduct T = 25 °C s rai C n 60 D ra - 0.4 I D -T fsg 30 0.2 T = 125 °C T = - 55 °C C C 0.0 0 0 1 2 3 4 5 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) I - Drain Current (A) D GS
Transfer Characteristics Transconductance
0.025 6000 5000 C 0.020 iss ) (pF) 4000 tance (Ω 0.015 is s e 3000 -R n 0.010 V = 4.5 V apacitance -O GS C ) n 2000 (o C - S DR 0.005 V = 10 V GS 1000 Coss C 0.000 rss 0 0 20 40 60 80 100 0 10 20 30 40 50 60 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Capacitance On-Resistance vs. Drain Current
S11-2046-Rev. C, 24-Oct-11
3
Document Number: 69099 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000