Datasheet SQD50N06-07L (Vishay) - 4
| 制造商 | Vishay |
| 描述 | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 9 / 4 — SQD50N06-07L. TYPICAL CHARACTERISTICS. Gate Charge. On-Resistance vs. … |
| 文件格式/大小 | PDF / 161 Kb |
| 文件语言 | 英语 |
SQD50N06-07L. TYPICAL CHARACTERISTICS. Gate Charge. On-Resistance vs. Junction Temperature. Source Drain Diode Forward Voltage
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SQD50N06-07L
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 10 2.3 I = 20 A 2.0 D (V) 8 I = 50 A D V = 30 V DS ltage o 1.7 V = 10 V GS 6 tance ) is s e lized ource V -R a 1.4 S n V = 4.5 V rm GS to- 4 -O )n (No ate- (o 1.1 G S D - R GS 2 V 0.8 0 0.5 0 20 40 60 80 100 - 50 - 25 0 25 50 75 100 125 150 175 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
100 0.05 10 0.04 ) (A T = 150 °C J 1 tance (Ω rrent 0.03 u is s e -R n 0.1 ource C 0.02 -O S T = 25 °C J ) - n (o I S S T = 150 °C D J R 0.01 0.01 T = 25 °C J 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.5 80 I = 10 mA 0.1 (V) 76 D ) tage - 0.3 72 I = 5 mA D ource Vol Variance (V -S ) I = 250 μA D (th - 0.7 -to 68 in GSV ra -D S - 1.1 D 64 V - 1.5 60 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 T - Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
S11-2046-Rev. C, 24-Oct-11
4
Document Number: 69099 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 10 2.3 I = 20 A 2.0 D (V) 8 I = 50 A D V = 30 V DS ltage o 1.7 V = 10 V GS 6 tance ) is s e lized ource V -R a 1.4 S n V = 4.5 V rm GS to- 4 -O )n (No ate- (o 1.1 G S D - R GS 2 V 0.8 0 0.5 0 20 40 60 80 100 - 50 - 25 0 25 50 75 100 125 150 175 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
100 0.05 10 0.04 ) (A T = 150 °C J 1 tance (Ω rrent 0.03 u is s e -R n 0.1 ource C 0.02 -O S T = 25 °C J ) - n (o I S S T = 150 °C D J R 0.01 0.01 T = 25 °C J 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.5 80 I = 10 mA 0.1 (V) 76 D ) tage - 0.3 72 I = 5 mA D ource Vol Variance (V -S ) I = 250 μA D (th - 0.7 -to 68 in GSV ra -D S - 1.1 D 64 V - 1.5 60 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 T - Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
S11-2046-Rev. C, 24-Oct-11
4
Document Number: 69099 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000