Datasheet HMC8120 (Analog Devices) - 10

制造商Analog Devices
描述71 GHz to 76 GHz, E-Band Variable Gain Amplifier
页数 / 页16 / 10 — HMC8120. Data Sheet. 320. IDD = 250mA. IDD = 150mA. IDD = 110mA. IDD = …
修订版A
文件格式/大小PDF / 362 Kb
文件语言英语

HMC8120. Data Sheet. 320. IDD = 250mA. IDD = 150mA. IDD = 110mA. IDD = 225mA. IDD = 140mA. IDD = 100mA. DD = 200mA. DD = 130mA. DD = 90mA

HMC8120 Data Sheet 320 IDD = 250mA IDD = 150mA IDD = 110mA IDD = 225mA IDD = 140mA IDD = 100mA DD = 200mA DD = 130mA DD = 90mA

该数据表的模型线

文件文字版本

HMC8120 Data Sheet 20 28 320 IDD = 250mA IDD = 150mA IDD = 110mA IDD = 225mA IDD = 140mA IDD = 100mA I I I 15 DD = 200mA DD = 130mA DD = 90mA IDD = 175mA IDD = 120mA IDD = 80mA 24 310 ) (% 10 E 20 300 A P ), ) B B 5 ) d 16 290 (d A ( IN IN A (m 0 G GA 12 280 I DD ), m B –5 (d T 8 270 OUP P –10 4 OUT 260 GAIN PAE IDD –15 0 250 71.0 71.5 72.0 72.5 73.0 73.5 74.0 74.5 75.0 75.5 76.0
-028
–15 –13 –11 –9 –7 –5 –3 –1 1 3
029 0-
FREQUENCY (GHz) INPUT POWER (dBm)
13150 1315 Figure 29. Gain vs. Frequency at Various Drain Currents, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, VCTL1/VCTL2 = −5 V, RF = 71 GHz Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
28 320 28 320 24 310 24 310 ) ) (% (% E 20 300 E A 20 300 A P ),P ), B B 16 290 ) ) (d A 16 290 (d A IN IN A (m A (m 12 280 I DD G ), G 12 280 I DD ), m Bm B (d (d T 8 270 T 8 270 OU OU P P P P OUT OUT 4 GAIN 260 4 GAIN 260 PAE PAE IDD IDD 0 250 0 250 –15 –13 –11 –9 –7 –5 –3 –1 1 3
032
–15 –13 –11 –9 –7 –5 –3 –1 1 3
-030 50-
INPUT POWER (dBm) INPUT POWER (dBm)
131 13150 Figure 30. POUT, Gain, PAE, and IDD vs. Input Power, Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, VCTL1/VCTL2 = −5 V, RF = 73.5 GHz VCTL1/VCTL2 = −5 V, RF = 76 GHz
10 0.40 RF = 71.0GHz 100MHz TONE SPACING RF = 73.5GHz 300MHz TONE SPACING RF = 76.0GHz ) 0.35 V 500MHz TONE SPACING ( 750MHz TONE SPACING E 1 0.30 LTAG ) O V (V 0.25 T U DET P 0.1 UT 0.20 – V F O RE AK V 0.15 E -P O 0.01 -T 0.10 AK E P 0.05 0.001 0 –4 0 4 8 12 16 20
031
–20 –18 –16 –14 –12 –10 –8 –6 –4
134 0- 50-
OUTPUT POWER (dBm) TOTAL INPUT POWER (dBm)
1315 131 Figure 31. Detector Output Voltage (VREF – VDET) vs. Output Power at Various Figure 34. Envelope Detector Peak-to-Peak Output Voltage vs. Total Input RF Frequencies, VCTL1/VCTL2 = −5 V Power at Various Tone Spacings, RF = 71 GHz, VCTL1/VCTL2 = −5 V, VDET = 4 V with 150 Ω Load Impedance at ENVDET Rev. A | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE