Datasheet BC846BPN (NXP)
| 制造商 | NXP |
| 描述 | 65 V, 100 mA NPN/PNP general-purpose transistor |
| 页数 / 页 | 15 / 1 — BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor. Rev. 01 — 17 … |
| 文件格式/大小 | PDF / 133 Kb |
| 文件语言 | 英语 |
BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor. Rev. 01 — 17 July 2009. Product data sheet. Product profile
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BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 — 17 July 2009 Product data sheet 1. Product profile 1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA
BC846BPN SOT363 SC-88 BC846BS BC856BS
1.2 Features
n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA
TR1 (NPN)
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450
TR2 (PNP)
hFE DC current gain VCE = −5 V; 200 290 450 IC = −2 mA Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA
BC846BPN SOT363 SC-88 BC846BS BC856BS
1.2 Features
n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualified
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA
TR1 (NPN)
hFE DC current gain VCE = 5 V; IC = 2 mA 200 300 450
TR2 (PNP)
hFE DC current gain VCE = −5 V; 200 290 450 IC = −2 mA Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents