Datasheet BC846BPN (NXP) - 3
| 制造商 | NXP |
| 描述 | 65 V, 100 mA NPN/PNP general-purpose transistor |
| 页数 / 页 | 15 / 3 — NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose … |
| 文件格式/大小 | PDF / 133 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BC846BPN. 65 V, 100 mA NPN/PNP general-purpose transistor. Limiting values. Table 6. Symbol. Parameter
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NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 65 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; - 200 mA t ≤ p 1 ms IBM peak base current single pulse; - 200 mA t ≤ p 1 ms P ≤ tot total power dissipation Tamb 25 °C [1] - 200 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab618 500 Ptot (mW) 400 300 200 100 0−75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT363 (SC-88)
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 65 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; - 200 mA t ≤ p 1 ms IBM peak base current single pulse; - 200 mA t ≤ p 1 ms P ≤ tot total power dissipation Tamb 25 °C [1] - 200 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab618 500 Ptot (mW) 400 300 200 100 0−75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT363 (SC-88)
BC846BPN_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents