Datasheet BC846, BC847, BC848, BC849, BC850 (Fairchild) - 3

BC8 Typical Performance Characteristics 46- BC850 100 10000 NPN
I = 400µA V B CE = 5V T I = 350µA
80
B I = 300µA B IN A
1000 Epit
CURREN I = 250µA
60
B R O I = 200µA ENT G B CT
axial Silicon T
E L
40
I = 150µA B CURR
100
], COL I = 100µA A , DC B [m h FE
20
I C I = 50µA B
10 0 1 10 100 1000 0 4 8 12 16 20
V [V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
r
CE
ansistor Figure 1. Static Characteristic Figure 2. DC current Gain 10000 100
AGE IC = 10 IB VCE = 2V T ION VOLT
1000
VBE(sat) URREN AT
10
UR R C SAT ECTO L
100 1
(sat)[V], COL CE VCE(sat) ), V [mA], I C at (s BEV
10 0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage
T C
100
U
1000
D O R f=1MHz P V =5V CE H T CE ID W
10
AN
100
D N A -B APACIT IN A ], C G T
1
[pF N
10
E obC R R U ], C z H
0.1
[M
1 10 100 1000
f T
1 0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE I [mA], COLLECTOR CURRENT C
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3
www.fairchildsemi.com BC846- BC850 Rev. B