Datasheet BC846A, BC846B, BC8467A, BC8467B, BC8467C, BC8468A, BC8468B, BC8468C (Diodes) - 4
| 制造商 | Diodes |
| 描述 | NPN |
| 页数 / 页 | 7 / 4 — BC846A-BC848C. Electrical Characteristics. Characteristic Symbol. Min. … |
| 文件格式/大小 | PDF / 306 Kb |
| 文件语言 | 英语 |
BC846A-BC848C. Electrical Characteristics. Characteristic Symbol. Min. Typ. Max. Unit. Test. Condition. www.diodes.com
该数据表的模型线
文件文字版本
BC846A-BC848C Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC846 80 Collector-Base Breakdown Voltage BC847 BVCBO — — 50 V IC = 10µA BC848 30 BC846 65 Collector-Emitter Breakdown Voltage BC847 — — 45 V (Note 10) BVCEO IC = 10mA BC848 30 BC846 / BC847 6 Emitter-Base Breakdown Voltage BVEBO — — V IE = 1µA BC848 5 15 nA V Collector Cutoff Current I CB = 30V CBO — — 5 µA VCB = 30V, TJ = +150°C BC846 15 VCE= 80V Collector Emitter Cutoff Current BC847 ICES — — nA 15 VCE= 50V BC848 15 VCE= 30V Emitter Base Cutoff Current IEBO — — 100 nA VEB= 5V BC846A / BC847A / BC848A 200 Small Signal Current Gain BC846B / BC847B / BC848B 330 — — (Note 10) hfe — BC847C / BC848C 600 BC846A / BC847A / BC848A 2.7 Input Impedance BC846B / BC847B / BC848B 4.5 — kΩ (Note 10) hie — BC847C / BC848C 8.7 IC = 2.0mA, VCE = 5V BC846A / BC847A / BC848A 18 f=1.0kHz Output Admittance BC846B / BC847B / BC848B 30 — µS (Note 10) hoe — BC847C / BC848C 60 BC846A / BC847A / BC848A 1.5x10-4 Reverse Voltage Transfer BC846B / BC847B / BC848B 2x10-4 — — Ratio (Note 10) hre — BC847C / BC848C 3x10-4 BC846A / BC847A / BC848A 110 180 220 DC Current Gain (Note 10) BC846B / BC847B / BC848B hFE 200 290 450 — IC = 2.0mA, VCE = 5V BC847C / BC848C 420 520 800 Collector-Emitter Saturation Voltage 90 250 I mV C = 10mA, IB = 0.5mA (Note 10) VCE(sat) — 200 600 IC = 100mA, IB = 5.0mA 580 660 700 I Base-Emitter Turn-On Voltage(Note 10) V C = 2mA, VCE = 5V BE(on) mV — — 770 IC = 10mA, VCE = 5V 700 I Base-Emitter Saturation Voltage(Note 10) V C = 10mA, IB = 0.5mA BE(sat) — — mV 900 IC = 100mA, IB = 5mA Output Capacitance Cobo — 3 — pF VCB = 10V, f = 1.0MHz Transition Frequency fT 100 300 — MHz VCE = 5V, IC = 10mA, f = 100MHz VCE=5V, IC =200µA Noise Figure NF — 2 10 dB RS =2kΩ, f=1kHz ∆f=200Hz Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% BC846A – BC848C 4 of 7 December 2013 Document Number: DS11108 Rev. 26 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC846 80 Collector-Base Breakdown Voltage BC847 BVCBO — — 50 V IC = 10µA BC848 30 BC846 65 Collector-Emitter Breakdown Voltage BC847 — — 45 V (Note 10) BVCEO IC = 10mA BC848 30 BC846 / BC847 6 Emitter-Base Breakdown Voltage BVEBO — — V IE = 1µA BC848 5 15 nA V Collector Cutoff Current I CB = 30V CBO — — 5 µA VCB = 30V, TJ = +150°C BC846 15 VCE= 80V Collector Emitter Cutoff Current BC847 ICES — — nA 15 VCE= 50V BC848 15 VCE= 30V Emitter Base Cutoff Current IEBO — — 100 nA VEB= 5V BC846A / BC847A / BC848A 200 Small Signal Current Gain BC846B / BC847B / BC848B 330 — — (Note 10) hfe — BC847C / BC848C 600 BC846A / BC847A / BC848A 2.7 Input Impedance BC846B / BC847B / BC848B 4.5 — kΩ (Note 10) hie — BC847C / BC848C 8.7 IC = 2.0mA, VCE = 5V BC846A / BC847A / BC848A 18 f=1.0kHz Output Admittance BC846B / BC847B / BC848B 30 — µS (Note 10) hoe — BC847C / BC848C 60 BC846A / BC847A / BC848A 1.5x10-4 Reverse Voltage Transfer BC846B / BC847B / BC848B 2x10-4 — — Ratio (Note 10) hre — BC847C / BC848C 3x10-4 BC846A / BC847A / BC848A 110 180 220 DC Current Gain (Note 10) BC846B / BC847B / BC848B hFE 200 290 450 — IC = 2.0mA, VCE = 5V BC847C / BC848C 420 520 800 Collector-Emitter Saturation Voltage 90 250 I mV C = 10mA, IB = 0.5mA (Note 10) VCE(sat) — 200 600 IC = 100mA, IB = 5.0mA 580 660 700 I Base-Emitter Turn-On Voltage(Note 10) V C = 2mA, VCE = 5V BE(on) mV — — 770 IC = 10mA, VCE = 5V 700 I Base-Emitter Saturation Voltage(Note 10) V C = 10mA, IB = 0.5mA BE(sat) — — mV 900 IC = 100mA, IB = 5mA Output Capacitance Cobo — 3 — pF VCB = 10V, f = 1.0MHz Transition Frequency fT 100 300 — MHz VCE = 5V, IC = 10mA, f = 100MHz VCE=5V, IC =200µA Noise Figure NF — 2 10 dB RS =2kΩ, f=1kHz ∆f=200Hz Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% BC846A – BC848C 4 of 7 December 2013 Document Number: DS11108 Rev. 26 - 2
www.diodes.com
© Diodes Incorporated