Datasheet BC847ATT1, BC847BTT1, BC847CTT1 (ON Semiconductor) - 3

制造商ON Semiconductor
描述NPN Bipolar Transistor
页数 / 页6 / 3 — BC847ATT1, BC847BTT1, BC847CTT1. Figure 1. Normalized DC Current Gain. …
修订版3
文件格式/大小PDF / 68 Kb
文件语言英语

BC847ATT1, BC847BTT1, BC847CTT1. Figure 1. Normalized DC Current Gain. Figure 2. “Saturation” and “On” Voltages

BC847ATT1, BC847BTT1, BC847CTT1 Figure 1 Normalized DC Current Gain Figure 2 “Saturation” and “On” Voltages

该数据表的模型线

文件文字版本

BC847ATT1, BC847BTT1, BC847CTT1
2.0 1.0 VCE = 10 V 0.9 T 1.5 A = 25°C GAIN TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 1.0 0.7 TS) 0.8 0.6 VBE(on) @ VCE = 10 V 0.5 0.6 TAGE (VOL 0.4 , VOL 0.4 V 0.3 , NORMALIZED DC CURRENT 0.2 0.3 FE VCE(sat) @ IC/IB = 10 h 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient http://onsemi.com 3