Datasheet BC856BDW1T1G, SBC856BDW1T1G, BC857BDW1T1G, SBC857BDW1T1G, BC858CDW1T1G (ON Semiconductor) - 2

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = −10 mA) BC856, SBC856 Series −65 − − BC857, SBC857 Series −45 − − BC858 Series −30 − − Collector − Emitter Breakdown Voltage V(BR)CES V (IC = −10 mA, VEB = 0) BC856, SBC856 Series −80 − − BC857B, SBC857B Only −50 − − BC858 Series −30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = −10 mA) BC856, SBC856 Series −80 − − BC857, SBC857 Series −50 − − BC858 Series −30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = −1.0 mA) BC856, SBC856 Series −5.0 − − BC857, SBC857 Series −5.0 − − BC858 Series −5.0 − − Collector Cutoff Current ICBO (VCB = −30 V) − − −15 nA (VCB = −30 V, TA = 150°C) − − −4.0 mA
ON CHARACTERISTICS
DC Current Gain hFE − (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B − 150 − BC857C, SBC857C, BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B 220 290 475 BC857C, SBC857C, BC858C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base − Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) 100 − − Output Capacitance Cob pF (VCB = −10 V, f = 1.0 MHz) − − 4.5 Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) − − 10
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