Datasheet SEP8706 (Honeywell) - 2
| 制造商 | Honeywell |
| 描述 | AlGaAs Infrared Emitting Diode |
| 页数 / 页 | 4 / 2 — SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. … |
| 文件格式/大小 | PDF / 430 Kb |
| 文件语言 | 英语 |
SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP. MAX. UNITS. TEST CONDITIONS
该数据表的模型线
文件文字版本
SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.