Datasheet BSC034N06NS (Infineon) - 6
| 制造商 | Infineon |
| 描述 | OptiMOS Power-Transistor |
| 页数 / 页 | 10 / 6 — BSC034N06NS. 9 Drain-source on-state resistance. 10 Typ. gate threshold … |
| 修订版 | 02_00 |
| 文件格式/大小 | PDF / 501 Kb |
| 文件语言 | 英语 |
BSC034N06NS. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 6.5. 5.5. 4.5. [V]. 3.5. ( S. 2.5. 1.5. 0.5. -60. -20. 100. 140. 180
该数据表的模型线
文件文字版本
BSC034N06NS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
7 5 6.5 6 5.5 4 5 4.5 ]
max W
3 4
410 mA
[m [V] ) ) n 3.5 h o t ( ( S
41 µA
DS 3 G
typ
R V 2 2.5 2 1.5 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 10000 103
Ciss
103 1000 102 ] ]
Coss
[pF [A C I F
25 °C
102
150 °C
100 101
Crss
101 10 100 0 20 40 60 0 0.5 1 1.5 2 V [V] V [V] DS SD
Rev.2.0 page 6 2013-10-17
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
7 5 6.5 6 5.5 4 5 4.5 ]
max W
3 4
410 mA
[m [V] ) ) n 3.5 h o t ( ( S
41 µA
DS 3 G
typ
R V 2 2.5 2 1.5 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 10000 103
Ciss
103 1000 102 ] ]
Coss
[pF [A C I F
25 °C
102
150 °C
100 101
Crss
101 10 100 0 20 40 60 0 0.5 1 1.5 2 V [V] V [V] DS SD
Rev.2.0 page 6 2013-10-17