1N4001 thru 1N4007
Vishay General Semiconductor 50 100 T = 25 °C J 45 t = 1 ms f = 1.0 MHz p V = 50 mV sig p-p ent (A) 40 35 t = 2 ms p ge Curr ur 30 S 10 t = 5 ms p d 25 tp 20 Junction Capacitance (pF) Peak Forwar 15 Square Waveform 10 1 25 50 75 100 125 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 3 - Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 100 T = 25 °C J Pulse Width = 300 μs 1 % Duty Cycle ent (A) 10 10 d Curr 1 Forwar s eou 1 0.1 ient Thermal Impedance (°C/W) tantan s s n In a Tr 0.01 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Transient Thermal Impedance 1000 T = 150 °C J 100 ent (μA) e Curr 10 s T = 100 °C J Rever s 1 T = 25 °C J 0.1 tantaneou s In 0.01 0 20 40 60 80 100 Percentage of Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Document Number: 88503 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 23-Feb-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

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