Datasheet RFP30N06LE, RF1S30N06LESM (Fairchild) - 7
| 制造商 | Fairchild |
| 描述 | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 页数 / 页 | 8 / 7 — RFP30N06LE, RF1S30N06LESM. PSPICE Electrical Model. DPLCAP. DRAIN. … |
| 文件格式/大小 | PDF / 194 Kb |
| 文件语言 | 英语 |
RFP30N06LE, RF1S30N06LESM. PSPICE Electrical Model. DPLCAP. DRAIN. LDRAIN. RSCL2. RSCL1. DBREAK. + 51. ESCL. EBREAK. ESG. DBODY. RDRAIN. VTO +. MOS2
该数据表的模型线
文件文字版本
RFP30N06LE, RF1S30N06LESM PSPICE Electrical Model
SUBCKT RFP30N06LE 2 1 3; rev 6/2/93 CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9
DPLCAP 5 DRAIN 10 2
DBODY 7 5 DBDMOD
LDRAIN
DBREAK 5 11 DBKMOD
RSCL2 RSCL1
DESD1 91 9 DESD1MOD
DBREAK + 51
DESD2 91 7 DESD2MOD
5
DPLCAP 10 5 DPLCAPMOD
ESCL 51 11 - 50 6 EBREAK +
EBREAK 11 7 17 18 75.39
ESG 8 17 DBODY RDRAIN
EDS 14 8 5 8 1
+ 18 16 -
EGS 13 8 6 8 1
VTO +
ESG 6 10 6 8 1
- MOS2
EVTO 20 6 18 8 1
EVTO GATE 21 9 20 + - 6 18 1 MOS1 8
IT 8 17 1
LGATE RGATE RIN CIN DESD1
LDRAIN 2 5 1e-9
91 RSOURCE LSOURCE
LGATE 1 9 7.22e-9
DESD2 8 3
LSOURCE 3 7 6.31e-9
7 SOURCE S1A S2A
MOS1 16 6 8 8 MOSMOD M = 0.99
12 RBREAK
MOS2 16 21 8 8 MOSMOD M = 0.01
13 14 15 17 18 8 13
RBREAK 17 18 RBKMOD 1
S1B S2B RVTO
RDRAIN 50 16 RDSMOD 11.86e-3
13 CB CA 19
RGATE 9 20 2.52
IT 14 + +
RIN 6 8 1e9
VBAT EGS 6 EDS 5
RSCL1 5 51 RSLVCMOD 1e-6
+ 8 8
RSCL2 5 50 1e3
- -
RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.5 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7)) .MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2) .ENDS NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options
; IEEE Power Electronics Specialist Conference Records 1991. ©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
SUBCKT RFP30N06LE 2 1 3; rev 6/2/93 CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9
DPLCAP 5 DRAIN 10 2
DBODY 7 5 DBDMOD
LDRAIN
DBREAK 5 11 DBKMOD
RSCL2 RSCL1
DESD1 91 9 DESD1MOD
DBREAK + 51
DESD2 91 7 DESD2MOD
5
DPLCAP 10 5 DPLCAPMOD
ESCL 51 11 - 50 6 EBREAK +
EBREAK 11 7 17 18 75.39
ESG 8 17 DBODY RDRAIN
EDS 14 8 5 8 1
+ 18 16 -
EGS 13 8 6 8 1
VTO +
ESG 6 10 6 8 1
- MOS2
EVTO 20 6 18 8 1
EVTO GATE 21 9 20 + - 6 18 1 MOS1 8
IT 8 17 1
LGATE RGATE RIN CIN DESD1
LDRAIN 2 5 1e-9
91 RSOURCE LSOURCE
LGATE 1 9 7.22e-9
DESD2 8 3
LSOURCE 3 7 6.31e-9
7 SOURCE S1A S2A
MOS1 16 6 8 8 MOSMOD M = 0.99
12 RBREAK
MOS2 16 21 8 8 MOSMOD M = 0.01
13 14 15 17 18 8 13
RBREAK 17 18 RBKMOD 1
S1B S2B RVTO
RDRAIN 50 16 RDSMOD 11.86e-3
13 CB CA 19
RGATE 9 20 2.52
IT 14 + +
RIN 6 8 1e9
VBAT EGS 6 EDS 5
RSCL1 5 51 RSLVCMOD 1e-6
+ 8 8
RSCL2 5 50 1e3
- -
RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.5 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7)) .MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2) .ENDS NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options
; IEEE Power Electronics Specialist Conference Records 1991. ©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1