Datasheet SPD50P03L G (Infineon) - 6
| 制造商 | Infineon |
| 描述 | OptiMOS -P Power-Transistor |
| 页数 / 页 | 9 / 6 — SPD50P03L. SPD50P03L G. 9 Drain-source on-state resistance. 10 Typ. gate … |
| 修订版 | 01_09 |
| 文件格式/大小 | PDF / 395 Kb |
| 文件语言 | 英语 |
SPD50P03L. SPD50P03L G. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 2.5. 1.5. [V]. (th) S. (on). DSR. 0.5. -60. -20. 100
该数据表的模型线
文件文字版本
SPD50P03L SPD50P03L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-50 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA
11 2.5 2
98%.
9 ]
98 % Ω
1.5
typ.
[V] [m 7 (th) S (on) G
typ.
DSR -V 1
2%
5 0.5 3 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 10000 1000
Ciss
100
Coss
1000
Crss
103 [pF] [A] C I F 10
25 °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98%
102 100 1 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 -V DS [V] -V SD [V]
Rev. 1.9 page 6 2012-09-13 Document Outline Untitled
R DS(on)=f(T j); I D=-50 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA
11 2.5 2
98%.
9 ]
98 % Ω
1.5
typ.
[V] [m 7 (th) S (on) G
typ.
DSR -V 1
2%
5 0.5 3 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 10000 1000
Ciss
100
Coss
1000
Crss
103 [pF] [A] C I F 10
25 °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98%
102 100 1 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 -V DS [V] -V SD [V]
Rev. 1.9 page 6 2012-09-13 Document Outline Untitled