Datasheet TSSP950 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications |
| 页数 / 页 | 11 / 2 — TSSP950.. ABSOLUTE MAXIMUM RATINGS PARAMETER. TEST CONDITION. SYMBOL. … |
| 文件格式/大小 | PDF / 360 Kb |
| 文件语言 | 英语 |
TSSP950.. ABSOLUTE MAXIMUM RATINGS PARAMETER. TEST CONDITION. SYMBOL. VALUE. UNIT. Note. ELECTRICAL AND OPTICAL CHARACTERISTICS
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TSSP950..
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage VS -0.3 to +3.6 V Supply current IS 5 mA Output voltage VO -0.3 to +3.6 V Output current IO 5 mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability
ELECTRICAL AND OPTICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Supply voltage VS 2.0 - 3.6 V VS = 5 V, Ev = 0 ISD 0.25 0.37 0.45 mA Supply current Ev = 40 klx, sunlight ISH - 0.8 - mA Ev = 0, IR diode TSAL6200, Transmission distance d - 8 - m IF = 50 mA, test signal see Fig. 1 I Output voltage low OSL = 0.5 mA, Ee = 0.7 mW/m2, V test signal see Fig. 1 OSL - - 100 mV Pulse width tolerance: Minimum irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee min. - 0.7 1.2 mW/m2 test signal see Fig. 1 t Maximum irradiance pi - 5/fo < tpo < tpi + 6/fo, E test signal see Fig. 1 e max. 30 - - W/m2 Angle of half Directivity ϕ 50 - ° transmission distance 1/2 - ± Rev. 1.1, 17-Apr-2019
2
Document Number: 82867 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage VS -0.3 to +3.6 V Supply current IS 5 mA Output voltage VO -0.3 to +3.6 V Output current IO 5 mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability
ELECTRICAL AND OPTICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Supply voltage VS 2.0 - 3.6 V VS = 5 V, Ev = 0 ISD 0.25 0.37 0.45 mA Supply current Ev = 40 klx, sunlight ISH - 0.8 - mA Ev = 0, IR diode TSAL6200, Transmission distance d - 8 - m IF = 50 mA, test signal see Fig. 1 I Output voltage low OSL = 0.5 mA, Ee = 0.7 mW/m2, V test signal see Fig. 1 OSL - - 100 mV Pulse width tolerance: Minimum irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee min. - 0.7 1.2 mW/m2 test signal see Fig. 1 t Maximum irradiance pi - 5/fo < tpo < tpi + 6/fo, E test signal see Fig. 1 e max. 30 - - W/m2 Angle of half Directivity ϕ 50 - ° transmission distance 1/2 - ± Rev. 1.1, 17-Apr-2019
2
Document Number: 82867 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000