link to page 7 link to page 12 link to page 7 link to page 12 link to page 3 IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor 1 Maximum ratings at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain Source Voltage 1 VDS,max - - 400 V VGS = 0 V - - 31 A TC = 25 °C; Tj = Tj,max Continuous current, drain source ID - - 20 TC = 100 °C; Tj = Tj,max - - 14 TC = 125 °C; Tj = Tj,max - - 60 A T Pulsed current, drain source 23 I C = 25 °C; IG = 26.1 mA; See D,pulse Figure 3;Figure 21; Pulsed current, drain source - - 35 A T 3 4 I C = 125 °C; IG = 26.1 mA; See D,pulse Figure 4;Figure 22; Gate current, continuous 4 5 IG - - 20 mA Tj = 0 °C to 150 °C; Refer to gate drive app note Gate current, pulsed 5 IG,pulse - - 2000 mA Tj = 0 °C to 150 °C; tPULSE = 50 ns, f=100 kHz Refer to gate drive app note Gate source voltage, continuous 5 VGS -10 - - V Tj = 0 °C to 150 °C; Refer to gate drive app note Gate source voltage, pulsed 5 VGS,pulse -25 - - V Tj = 0 °C to 150 °C; tPULSE= 50 ns, f = 100 kHz; open drain Refer to gate drive app note Power dissipation Ptot - - 125 W TC = 25 °C Operating temperature Tj 0 - 150 °C Storage temperature Tstg 0 - 150 °C Max shelf life depends on storage conditions. Drain-source voltage slew-rate dV/dt 200 V/ns 1 All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V 2 Limits derived from product characterization, parameter not measured during production 3 Ensure that average gate drive current, IG is ≤ 20 mA 4 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. 5 We recommend using an advanced driving technique to optimize the device performance. Please see application information for details. Final Data Sheet 3 Rev. 2.0 2018-04-25