Datasheet IGT40R070D1 E8220 (Infineon) - 8

IGT40R070D1 E8220 400V CoolGaN™ enhancement-mode Power Transistor
Figure 5
Typ. output characteristics
Figure 6
Typ. output characteristics
90 90
I = 26.1 mA G
80 80 70
I = 10 mA
70
G I = 1 mA
60
G
60
I = 26.1 mA G
50 ) 50
I = 10 mA
)
G
(A (A
I = 0.1mA
I D
G
I D 40 40
I = 1 mA G
30 30 20 20
I = 0.1mA G
10 10 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V (V) V (V) DS DS
ID=f(VDS,IG); Tj= 25 °C ID=f(VDS,IG); Tj= 125 °C
Figure 7
Typ. Drain-source on-state resistance
Figure 8
Drain-source on-state resistance
200 120 110
I = 0.1 mA I = 1 mA G G I = 10 mA I = 26.1 mA I = 8A, V = 3.5V, G G D GS
100 180 90 80 ) ) 160 Ω Ω 70
I = 8A, I = 26.1mA, D G
(m (m ) ) n n 60 (o (o S S D D R 140 50 R 40 30 120 20 10 100 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 I (A) T (°C) D J
Rdson=f(ID,IGS); Tj= 125 °C Rdson=f(Tj); ID = 8 A Final Data Sheet 8 Rev. 2.0 2018-04-25