Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon) - 6
| 制造商 | Infineon |
| 描述 | OptiMOS Power Transistors |
| 页数 / 页 | 10 / 6 — IPB230N06L3 G IPP230N06L3 G. 9 Drain-source on-state resistance. 10 Typ. … |
| 文件格式/大小 | PDF / 305 Kb |
| 文件语言 | 英语 |
IPB230N06L3 G IPP230N06L3 G. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 2.5. [V]. (th) 1.5. (on). 0.5. -60. -20
该数据表的模型线
文件文字版本
IPB230N06L3 G IPP230N06L3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D
44 3 40 2.5 36 2 32 ]
Ω 110 µA
[m [V] 28 (th) 1.5 (on)
max
S
11µA
G DS V R 24 1
typ
20 0.5 16 12 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T T j [°C] j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 103
Ciss
103
Coss 25 °C, 98%
102
175 °C, 98%
102 [pF]
25 °C
[A] C I F
Crss
101
175 °C
101 100 0 20 40 60 0 0.5 1 1.5 2 V DS [V] V SD [V]
Rev. 2.2 page 6 2010-01-22
R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D
44 3 40 2.5 36 2 32 ]
Ω 110 µA
[m [V] 28 (th) 1.5 (on)
max
S
11µA
G DS V R 24 1
typ
20 0.5 16 12 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T T j [°C] j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 103
Ciss
103
Coss 25 °C, 98%
102
175 °C, 98%
102 [pF]
25 °C
[A] C I F
Crss
101
175 °C
101 100 0 20 40 60 0 0.5 1 1.5 2 V DS [V] V SD [V]
Rev. 2.2 page 6 2010-01-22