Datasheet ZVN4210G (Diodes) - 2

ZVN4210G Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit N
Drain-Source Voltage VDSS 100 V
OI
Gate-Source Voltage VGSS 20 V
T
Continuous Drain Current VGS = 10V TA = +25°C ID 800 mA
A
Pulsed Drain Current IDM A
M R O FT N Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
IC UE Characteristic Symbol Value Unit DC
Total Power Dissipation
O
TA = +25°C PD 2 W
NR
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
AP V DW AE Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
N Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 100   V VGS = 0V, ID =1mA   10 µA V Zero Gate Voltage Drain Current I DS = 100V, VGS = 0V DSS   100 µA VDS=80V, VGS=0V, T=125°C (Note 6) Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) 0.8  2.4 V VDS = VGS, ID = 1mA   1.5 Ω V Static Drain-Source On-Resistance GS = 10V, ID = 1.5A RDS(ON)   1.8 Ω VGS = 5V, ID = 0.5A  0.79  I Diode Forward Voltage (Note 5) V S =0.32A, VGS =0V SD  V 0.89  IS =1.0A, VGS =0V On-State Drain Current (Note 5) ID(ON) 2.5   A VDS =25V, VGS =10V Forward Transconductance (Notes 5 and 6) gfs 250   mS VDS =25V,ID =1.5A I Reverse Recovery Time (to I F =0.45A, VGS =0V, IR =100mA, R =10%) tRR  135  ns VR =10V
DYNAMIC CHARACTERISTICS
(Note 6) Input Capacitance Ciss   100 pF Output Capacitance Coss   40 pF VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss   12 pF Turn-On Delay Time (Note 7) tD(ON)   4 ns Turn-On Rise Time (Note 7) tR   8 ns VDD = 25V, ID=1.5A Turn-Off Delay Time (Note 7) tD(OFF)   20 ns Turn-Off Fall Time (Note 7) tF   30 ns Notes: 5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%. 6. Sample test. 7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator. Spice parameter data is available upon request for this device ZVN4210G 2 of 5 February 2015 Document Number DS33366 Rev. 3 - 2
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