2ED2181 (4) S06F (J)2ED2108(4)S06F(J) 650 V half bridge gate driver with integrated bootstrap diode 9 Part marking information Front Side Back Side Part number 2ED2108XXX Infineon logo Lot code XXXXH Assembly YYWW Date code XXXX X Pin 1 site code identifier (may vary) Figure 26 Marking information PG-DSO-8 Front Side Infineon logo 2ED21084 Part number Date code H YYWW XXX Assembly site code Pin 1 XXXXXXXXXXX identifier Lot code Figure 27 Marking information PG-DSO-14 Datasheet 21 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime 5.4 Matched propagation delays 5.5 Input logic compatibility 5.6 Undervoltage lockout 5.7 Bootstrap diode 5.8 Calculating the bootstrap capacitance CBS 5.9 Tolerant to negative tranisents on input pins 5.10 Negative voltage transient tolerance of VS pin 5.11 NTSOA – Negative Transient Safe Operating Area 5.12 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.13 Maximum switching frequency 5.14 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history