Datasheet SCT3160KL (Rohm) - 7

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描述N-channel SiC power MOSFET
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SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005

SCT3160KL Electrical characteristic curves TSQ50211-SCT3160KL 14.Jun.2018 - Rev.005

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SCT3160KL
Datasheet l
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 100 20 V = 10V DS 18 V = 10V DS Pulsed Pulsed 16 10 ] [A] 14 [A I D : I D t 12 : t 1 ren T = 150ºC 10 a ren T = 75ºC a Cur 8 Cur T = 25ºC a n T = 150ºC n ai T = -25ºC a a 6 ai Dr T = 75ºC 0.1 a Dr T = 25ºC 4 a T = -25ºC a 2 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : V [V] Gate - Source Voltage : V [V] GS GS Fig.10 Gate Threshold Voltage Fig.11 Transconductance vs. Drain Current vs. Junction Temperature 6 10 V = 10V DS V = 10V DS I = 2.5mA D Pulsed ] 5 [V (th) ] S 4 G [S V fs : g e 3 e c 1 tag ol tan c 2 ld V du T = 150ºC a ho on T = 75ºC c a s T = 25ºC a 1 hres T = -25ºC ran a T T ate 0 0.1 G -50 0 50 100 150 200 0.1 1 10 Junction Temperature : T [ºC] Drain Current : I [A] j D www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 7/12
14.Jun.2018 - Rev.005