Datasheet SCT3160KL (Rohm) - 8
制造商 | Rohm |
描述 | N-channel SiC power MOSFET |
页数 / 页 | 13 / 8 — SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. … |
文件格式/大小 | PDF / 716 Kb |
文件语言 | 英语 |
SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
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SCT3160KL
Datasheet l
Electrical characteristic curves
Fig.12 Static Drain - Source On - State Fig.13 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature 0.64 0.64 e T = 25ºC V = 18V a e c c GS 0.56 Pulsed 0.56 Pulsed tan tan is is 0.48 0.48 Res Res e 0.40 e 0.40 tat ] tat ] -S -S n [W 0.32 n [W 0.32 O ) I = 11A D O ) e (on (on S e S I = 11A D rc D 0.24 rc D 0.24 I = 5A ou : R D ou : R S 0.16 S 0.16 - - I = 5A D n n ai 0.08 ai 0.08 Dr Dr ic ic 0.00 0.00 tat tat S 6 8 10 12 14 16 18 20 22 S -50 0 50 100 150 200 Gate - Source Voltage : V [V] Junction Temperature : T [ºC] GS j Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 1 e c tan is Res e tat ] -S n [W 0.1 O ) T = 150ºC a e (on S T = 125ºC a rc D T = 75ºC a ou : R T = 25ºC S a - T = -25ºC a n ai V = 18V GS Dr Pulsed ic 0.01 tat S 1 10 100 Drain Current : I [A] D www.rohm.com
TSQ50211-SCT3160KL
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14.Jun.2018 - Rev.005