Datasheet SCT3160KLHR (Rohm) - 7
制造商 | Rohm |
描述 | Automotive Grade N-channel SiC power MOSFET |
页数 / 页 | 13 / 7 — SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. … |
文件格式/大小 | PDF / 963 Kb |
文件语言 | 英语 |
SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Electrical characteristic curves
Fig.7 Tj = 150ºC Typical Output Fig.8 Tj = 150ºC Typical Output Characteristics(I) Characteristics(II) 20 10 18 20V 14V 9 20V 14V 18V 18V 16 8 ] 16V ] 12V 12V 16V [A 14 [A 7 I D I D t : 12 Ta = 150ºC t : 6 10V Pulsed rren 10 rren 5 n Cu 8 n Cu 4 ai 10V ai V Dr 6 Dr 3 GS= 8V 4 2 T 2 a = 150ºC V 1 Pulsed GS= 8V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics Fig.10 Body Diode Forward Voltage vs. Gate - Source Voltage 0 ] 6 -2 Ta = 150ºC [V ID=5A Pulsed SD -4 V 5 ] VGS = -4V e : [A -6 VGS = -2V I D V tag 4 GS = 0V ol t : -8 VGS = 18V rren -10 ard V 3 -12 n Cu Forw ai 2 -14 T Dr e a= 150ºC od -16 y Di 1 -18 Bod T -20 0 a= 25ºC -10 -8 -6 -4 -2 0 -4 0 4 8 12 16 20 Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 7/12
16.Nov.2018 - Rev.001