Datasheet SCT3160KLHR (Rohm) - 8
制造商 | Rohm |
描述 | Automotive Grade N-channel SiC power MOSFET |
页数 / 页 | 13 / 8 — SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. … |
文件格式/大小 | PDF / 963 Kb |
文件语言 | 英语 |
SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Electrical characteristic curves
Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 20 VDS = 10V V Pulsed 18 DS = 10V Pulsed 16 ] 10 ] [A [A 14 I D I D t : t : 12 rren 1 rren 10 Ta= 150ºC n Cu T 8 Ta= 150ºC a= 75ºC n Cu ai T Ta= 75ºC a= 25ºC ai Dr 6 0.1 T Ta= 25ºC a= -25ºC Dr 4 Ta= -25ºC 2 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 10 ] V V [V DS = 10V DS = 10V I Pulsed 5 D = 2.5mA ] S(th) G [S V fs 4 g e : tag ce : ol 3 ctan 1 ld V du ho 2 es scon Ta = 150ºC Ta = 75ºC Thr Tran Ta = 25ºC 1 ate Ta = -25ºC G 0 0.1 -50 0 50 100 150 200 0.1 1 10 Junction Temperature : Tj [ºC] Drain Current : ID [A] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12
16.Nov.2018 - Rev.001