Datasheet TK2P90E (Toshiba) - 2
| 制造商 | Toshiba |
| 描述 | MOSFETs Silicon N-Channel MOS (π-MOSVIII) |
| 页数 / 页 | 9 / 2 — TK2P90E. 5. Thermal. Characteristics. Characteristics. Symbol. Max. Unit. … |
| 文件格式/大小 | PDF / 334 Kb |
| 文件语言 | 英语 |
TK2P90E. 5. Thermal. Characteristics. Characteristics. Symbol. Max. Unit. Channel-to-case. thermal. resistance. Rth(ch-c). 1.56. /W. Note. 1:. Ensure
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TK2P90E 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 1.56 /W Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25 (initial), L = 72.3 mH, RG = 25 Ω, IAR = 2 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-09-17 Rev.3.0