Datasheet TK2P90E (Toshiba) - 3

TK2P90E 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V   ±1 µA Drain cut-off current IDSS VDS = 720 V, VGS = 0 V   10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 900   V Gate threshold voltage Vth VDS = 10 V, ID = 0.2 mA 2.5  4.0 Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 1.0 A  4.7 5.9 Ω 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz  500  pF Reverse transfer capacitance Crss  4  Output capacitance Coss  40  Gate resistance rg VDS = OPEN, f = 1 MHz  5  Ω Switching time (rise time) tr See Fig. 6.2.1.  25  ns Switching time (turn-on time) ton  50  Switching time (fall time) tf  22  Switching time (turn-off time) toff  70  MOSFET dv/dt ruggedness dv/dt VDD = 0 to 400 V, ID = 2 A 10   V/ns VDD ≈ 400 V VGS = 0 V/10 V ID = 1 A RL = 400 Ω RG = 50 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Qg VDD ≈ 400 V, VGS = 10 V, ID = 2 A  12  nC gate-drain) Gate-source charge 1 Qgs1  4  Gate-drain charge Qgd  5  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Diode forward voltage VDSF IDR = 2 A, VGS = 0 V   -1.7 V Reverse recovery time trr IDR = 2 A, VGS = 0 V  800  ns Reverse recovery charge Q -dIDR/dt = 100 A/µs rr  3.5  µC Peak reverse recovery current Irr  11  A 3 2014-09-17 Rev.3.0