Datasheet GSIB620, GSIB640, GSIB660, GSIB680 (Vishay)
| 制造商 | Vishay |
| 描述 | Single-Phase Single In-Line Bridge Rectifiers |
| 页数 / 页 | 4 / 1 — GSIB620, GSIB640, GSIB660, GSIB680. Single-Phase Single In-Line Bridge … |
| 文件格式/大小 | PDF / 83 Kb |
| 文件语言 | 英语 |
GSIB620, GSIB640, GSIB660, GSIB680. Single-Phase Single In-Line Bridge Rectifiers. FEATURES. Case Style GSIB-5S
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GSIB620, GSIB640, GSIB660, GSIB680
www.vishay.com Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers FEATURES
• UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ ~ ~ • Material categorization: for definitions of compliance
Case Style GSIB-5S
~ please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications.
PRIMARY CHARACTERISTICS MECHANICAL DATA
Package GSIB-5S
Case:
GSIB-5S IF(AV) 6.0 A Molding compound meets UL 94 V-0 flammability rating VRRM 200 V, 400 V, 600 V, 800 V Base P/N-E3 - RoHS-compliant, commercial grade IFSM 180 A
Terminals:
Matte tin plated leads, solderable per IR 10 μA J-STD-002 and JESD 22-B102 V E3 suffix meets JESD 201 class 1A whisker test F at IF = 3.0 V 0.95 V T
Polarity:
As marked on body J max. 150 °C Diode variations In-Line
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(TA = 25 °C unless otherwise specified)
PARAMETER SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified TC = 100 °C (1) 6.0 I A output current at F(AV) TA = 25 °C (2) 2.8 Peak forward surge current single sine-wave I superimposed on rated load (JEDEC method) FSM 180 A Rating for fusing (t < 8.3 ms) I2t 120 A2s Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
Notes
(1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum instantaneous forward 3.0 A V voltage drop per diode F 0.95 V Maximum DC reverse current at TA = 25 °C 10 rated DC blocking voltage per IR μA diode TA = 125 °C 250 Revision: 13-Jun-14
1
Document Number: 88648 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers FEATURES
• UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability • High case dielectric strength of 1500 VRMS • Solder dip 275 °C max. 10 s, per JESD 22-B106 ~ ~ ~ • Material categorization: for definitions of compliance
Case Style GSIB-5S
~ please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications.
PRIMARY CHARACTERISTICS MECHANICAL DATA
Package GSIB-5S
Case:
GSIB-5S IF(AV) 6.0 A Molding compound meets UL 94 V-0 flammability rating VRRM 200 V, 400 V, 600 V, 800 V Base P/N-E3 - RoHS-compliant, commercial grade IFSM 180 A
Terminals:
Matte tin plated leads, solderable per IR 10 μA J-STD-002 and JESD 22-B102 V E3 suffix meets JESD 201 class 1A whisker test F at IF = 3.0 V 0.95 V T
Polarity:
As marked on body J max. 150 °C Diode variations In-Line
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(TA = 25 °C unless otherwise specified)
PARAMETER SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forward rectified TC = 100 °C (1) 6.0 I A output current at F(AV) TA = 25 °C (2) 2.8 Peak forward surge current single sine-wave I superimposed on rated load (JEDEC method) FSM 180 A Rating for fusing (t < 8.3 ms) I2t 120 A2s Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
Notes
(1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
Maximum instantaneous forward 3.0 A V voltage drop per diode F 0.95 V Maximum DC reverse current at TA = 25 °C 10 rated DC blocking voltage per IR μA diode TA = 125 °C 250 Revision: 13-Jun-14
1
Document Number: 88648 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000