Datasheet GSIB620, GSIB640, GSIB660, GSIB680 (Vishay) - 2

GSIB620, GSIB640, GSIB660, GSIB680
www.vishay.com Vishay General Semiconductor
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GSIB620 GSIB640 GSIB660 GSIB680 UNIT
RJA (2) 22 Typical thermal resistance RJC (1) 3.4
Notes
(1) Unit case mounted on aluminum plate heatsink (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GSIB660-E3/45 7.0 45 20 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 10 100 Heatsink Mounting, TC T = 150 °C J 8 10 6 ard Current (A) T = 25 °C J rw 1 o ard Output Current (A) 4 rw o P.C.B. Mounting, T T = 125 °C A J 0.1 2 age F er v A Instantaneous F 0 0.01 0 50 100 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 210 1000 T = T T = 150 °C J J Max. J 180 Single Sine-Wave 100 150 T = 125 °C J 10 120 erse Current (µA) v 90 ard Surge Current (A) 1 rw o 60 ak F 0.1 e T = 25 °C 30 J P 1.0 Cycle Instantaneous Re 0 0.01 1 10 100 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Per Diode Per Diode Revision: 13-Jun-14
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