Datasheet BLP05H9S500P (Ampleon) - 7
| 制造商 | Ampleon |
| 描述 | Power LDMOS transistor |
| 页数 / 页 | 13 / 7 — BLP05H9S500P. Power LDMOS transistor. Fig 9. Power gain as a function of … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
BLP05H9S500P. Power LDMOS transistor. Fig 9. Power gain as a function of temperature;
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BLP05H9S500P Power LDMOS transistor
amp00950 amp00951 25.3 510 Gp G PL P (dB) (dB) (dB) (W) (W) (W) 25.2 505 25.1 500 25 495 24.9 490 24.8 485 24.7 480 20 30 40 50 60 70 20 30 40 50 60 70 T (°C) T (°C) VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB). VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB).
Fig 9. Power gain as a function of temperature; Fig 10. Output power as a function of temperature; typical values typical values
amp00952 amp00953 13.5 174 ID I Pdis d P is dis (A) (A) (A) (W) (W) (W) 13.4 172 13.3 170 13.2 168 13.1 166 20 30 40 50 60 70 20 30 40 50 60 70 T (°C) T (°C) VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB). VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB).
Fig 11. Drain current as a function of temperature; Fig 12. Power dissipation as a function of typical values temperature; typical values
BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 7 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
amp00950 amp00951 25.3 510 Gp G PL P (dB) (dB) (dB) (W) (W) (W) 25.2 505 25.1 500 25 495 24.9 490 24.8 485 24.7 480 20 30 40 50 60 70 20 30 40 50 60 70 T (°C) T (°C) VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB). VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB).
Fig 9. Power gain as a function of temperature; Fig 10. Output power as a function of temperature; typical values typical values
amp00952 amp00953 13.5 174 ID I Pdis d P is dis (A) (A) (A) (W) (W) (W) 13.4 172 13.3 170 13.2 168 13.1 166 20 30 40 50 60 70 20 30 40 50 60 70 T (°C) T (°C) VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB). VDS = 50 V; IDq = 50 mA; f = 433 MHz; CW; at PL(1dB).
Fig 11. Drain current as a function of temperature; Fig 12. Power dissipation as a function of typical values temperature; typical values
BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 7 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents