Datasheet PESD2V8R1BSF (Nexperia) - 3
| 制造商 | Nexperia |
| 描述 | Ultra low capacitance bidirectional ESD protection diode |
| 页数 / 页 | 13 / 3 — Nexperia. PESD2V8R1BSF. Ultra low capacitance bidirectional ESD … |
| 修订版 | 19012020 |
| 文件格式/大小 | PDF / 575 Kb |
| 文件语言 | 英语 |
Nexperia. PESD2V8R1BSF. Ultra low capacitance bidirectional ESD protection diode. 8. Limiting values Table 5. Limiting values
该数据表的模型线
文件文字版本
link to page 3 link to page 3 link to page 3
Nexperia PESD2V8R1BSF Ultra low capacitance bidirectional ESD protection diode 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRWM reverse standoff voltage Tamb = 25 °C -2.8 2.8 V IPPM rated rated peak pulse tp = 8/20 µs [1] - 4.5 A current Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C
ESD maximum ratings
VESD electrostatic discharge IEC 61000-4-2; contact discharge [2] - 10 kV voltage IEC 61000-4-2; air discharge [2] - 15 kV [1] According to IEC 61000-4-5 and IEC 61643-321. [2] Device stressed with ten non-repetitive ESD pulses. 001aaa630 120 IPP 100 % I 100 % I PP PP; 8 µs 90 % (%) 80 e-t 50 % IPP; 20 µs 40 10 % 0 t tr = 0.6 ns to 1 ns 0 10 20 30 40 t (µs) 30 ns 60 ns 001aaa631
Fig. 2. ESD pulse waveform according to IEC Fig. 1. 8/20 µs pulse waveform according to 61000-4-2 IEC 61000-4-5 and IEC 61643-321
PESD2V8R1BSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 5 November 2019 3 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Nexperia PESD2V8R1BSF Ultra low capacitance bidirectional ESD protection diode 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRWM reverse standoff voltage Tamb = 25 °C -2.8 2.8 V IPPM rated rated peak pulse tp = 8/20 µs [1] - 4.5 A current Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C
ESD maximum ratings
VESD electrostatic discharge IEC 61000-4-2; contact discharge [2] - 10 kV voltage IEC 61000-4-2; air discharge [2] - 15 kV [1] According to IEC 61000-4-5 and IEC 61643-321. [2] Device stressed with ten non-repetitive ESD pulses. 001aaa630 120 IPP 100 % I 100 % I PP PP; 8 µs 90 % (%) 80 e-t 50 % IPP; 20 µs 40 10 % 0 t tr = 0.6 ns to 1 ns 0 10 20 30 40 t (µs) 30 ns 60 ns 001aaa631
Fig. 2. ESD pulse waveform according to IEC Fig. 1. 8/20 µs pulse waveform according to 61000-4-2 IEC 61000-4-5 and IEC 61643-321
PESD2V8R1BSF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 5 November 2019 3 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents