Datasheet Si9407AEY (Vishay)
| 制造商 | Vishay |
| 描述 | P-Channel 60-V (D-S), 175 °C MOSFET |
| 页数 / 页 | 5 / 1 — Si9407AEY. P-Channel 60-V (D-S), 175 °C MOSFET. FEATURES. PRODUCT … |
| 文件格式/大小 | PDF / 102 Kb |
| 文件语言 | 英语 |
Si9407AEY. P-Channel 60-V (D-S), 175 °C MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V)
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Si9407AEY
Vishay Siliconix
P-Channel 60-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.120 at VGS = - 10 V ± 3.5 - 60 • TrenchFET® Power MOSFETs 0.15 at VGS = - 4.5 V ± 3.1 • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
SO-8
S S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View D
Ordering Information:
Si9407AEY-T1-E3 (Lead (Pb)-free) Si9407AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C ± 3.5 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C ± 3.0 A Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a IS - 2.5 TA = 25 °C 3.0 Maximum Power Dissipationa PD W TA = 70 °C 2.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70742 www.vishay.com S09-1341-Rev. E, 13-Jul-09 1
Vishay Siliconix
P-Channel 60-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Definition
0.120 at VGS = - 10 V ± 3.5 - 60 • TrenchFET® Power MOSFETs 0.15 at VGS = - 4.5 V ± 3.1 • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
SO-8
S S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View D
Ordering Information:
Si9407AEY-T1-E3 (Lead (Pb)-free) Si9407AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C ± 3.5 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C ± 3.0 A Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a IS - 2.5 TA = 25 °C 3.0 Maximum Power Dissipationa PD W TA = 70 °C 2.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70742 www.vishay.com S09-1341-Rev. E, 13-Jul-09 1