Datasheet NTZD3155C (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| 页数 / 页 | 8 / 3 — NTZD3155C. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. N/P. Test … |
| 修订版 | 4 |
| 文件格式/大小 | PDF / 144 Kb |
| 文件语言 | 英语 |
NTZD3155C. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. N/P. Test Condition. Min. Typ. Max. Unit
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NTZD3155C ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge QG(TOT) 1.5 2.5 Threshold Gate Charge QG(TH) N 0.1 VGS = 4.5 V, VDS = −10 V; ID = 540 mA Gate−to−Source Charge QGS 0.2 Gate−to−Drain Charge QGD 0.35 nC Total Gate Charge QG(TOT) 1.7 2.5 Threshold Gate Charge QG(TH) V 0.1 P GS = −4.5 V, VDS = 10 V; ID = −380 mA Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.4
SWITCHING CHARACTERISTICS (VGS = V)
(Note 4) Turn−On Delay Time td(ON) N 6.0 Rise Time tr V 4.0 GS = 4.5 V, VDD = −10 V, ID = 540 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 16 Fall Time tf 8.0 ns Turn−On Delay Time td(ON) P 10 Rise Time tr V 12 GS = −4.5 V, VDD = 10 V, ID = −215 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 35 Fall Time tf 19
Drain−Source Diode Characteristics
Forward Diode Voltage VSD N IS = 350 mA 0.7 1.2 VGS = 0 V, TJ = 25°C V P IS = −350 mA −0.8 −1.2 Reverse Recovery Time tRR N VGS = 0 V, IS = 350 mA 6.5 dIS/dt = 100 A/ms ns P IS = −350 mA 13 4. Switching characteristics are independent of operating junction temperatures
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NTZD3155C ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge QG(TOT) 1.5 2.5 Threshold Gate Charge QG(TH) N 0.1 VGS = 4.5 V, VDS = −10 V; ID = 540 mA Gate−to−Source Charge QGS 0.2 Gate−to−Drain Charge QGD 0.35 nC Total Gate Charge QG(TOT) 1.7 2.5 Threshold Gate Charge QG(TH) V 0.1 P GS = −4.5 V, VDS = 10 V; ID = −380 mA Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.4
SWITCHING CHARACTERISTICS (VGS = V)
(Note 4) Turn−On Delay Time td(ON) N 6.0 Rise Time tr V 4.0 GS = 4.5 V, VDD = −10 V, ID = 540 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 16 Fall Time tf 8.0 ns Turn−On Delay Time td(ON) P 10 Rise Time tr V 12 GS = −4.5 V, VDD = 10 V, ID = −215 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 35 Fall Time tf 19
Drain−Source Diode Characteristics
Forward Diode Voltage VSD N IS = 350 mA 0.7 1.2 VGS = 0 V, TJ = 25°C V P IS = −350 mA −0.8 −1.2 Reverse Recovery Time tRR N VGS = 0 V, IS = 350 mA 6.5 dIS/dt = 100 A/ms ns P IS = −350 mA 13 4. Switching characteristics are independent of operating junction temperatures
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