Datasheet PSMN0R9-25YLC (Nexperia) - 7
| 制造商 | Nexperia |
| 描述 | N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
| 页数 / 页 | 15 / 7 — Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in … |
| 修订版 | 02042018 |
| 文件格式/大小 | PDF / 933 Kb |
| 文件语言 | 英语 |
Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology. Table 6
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Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V; - 42.5 - ns RG(ext) = 4.7 Ω tr rise time - 74 - ns td(off) turn-off delay time - 103.5 - ns tf fall time - 55 - ns Qoss output charge VGS = 0 V; VDS = 12 V; f = 1 MHz; - 31.57 - nC Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.8 1.1 V see Figure 17 trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; - 48 - ns VGS = 0 V; VDS = 12 V Qr recovered charge - 60 - nC ta reverse recovery rise time VGS = 0 V; IS 25 A; - 26.3 - ns dIS/dt = -100 A/µs; VDS = 12 V; see Figure 18 tb reverse recovery fall time VGS = 0 V; IS = 25 A; - 21.7 - ns dIS/dt = -100 A/µs; VDS = 12 V; see Figure 18 003a a f 524 003a a f 525 100 8 I 10 2.8 D 2.6 RDSon (A) 3.0 (m) 80 4.5 6 60 2.4 4 40 V 2.2 2 GS (V) = 20 0 0 0 0.25 0.5 0.75 1 0 4 8 12 16 VDS (V) VGS (V)
Fig 6. Output characteristics; drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values
PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V; - 42.5 - ns RG(ext) = 4.7 Ω tr rise time - 74 - ns td(off) turn-off delay time - 103.5 - ns tf fall time - 55 - ns Qoss output charge VGS = 0 V; VDS = 12 V; f = 1 MHz; - 31.57 - nC Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.8 1.1 V see Figure 17 trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; - 48 - ns VGS = 0 V; VDS = 12 V Qr recovered charge - 60 - nC ta reverse recovery rise time VGS = 0 V; IS 25 A; - 26.3 - ns dIS/dt = -100 A/µs; VDS = 12 V; see Figure 18 tb reverse recovery fall time VGS = 0 V; IS = 25 A; - 21.7 - ns dIS/dt = -100 A/µs; VDS = 12 V; see Figure 18 003a a f 524 003a a f 525 100 8 I 10 2.8 D 2.6 RDSon (A) 3.0 (m) 80 4.5 6 60 2.4 4 40 V 2.2 2 GS (V) = 20 0 0 0 0.25 0.5 0.75 1 0 4 8 12 16 VDS (V) VGS (V)
Fig 6. Output characteristics; drain current as a Fig 7. Drain-source on-state resistance as a function function of drain-source voltage; typical values of gate-source voltage; typical values
PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents