Datasheet AUIRLR014N (Infineon)
| 制造商 | Infineon |
| 描述 | Automotive Grade |
| 页数 / 页 | 10 / 1 — AUTOMOTIVE GRADE. Features. DSS. 55V. RDS(on) max. 0.14. 10A. … |
| 文件格式/大小 | PDF / 415 Kb |
| 文件语言 | 英语 |
AUTOMOTIVE GRADE. Features. DSS. 55V. RDS(on) max. 0.14. 10A. Description. G D S. Standard Pack. Base part number. Package Type
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AUTOMOTIVE GRADE
AUIRLR014N
Features
Advanced Planar Technology HEXFET® Power MOSFET Logic Level Gate Drive
V
Low On-Resistance
DSS 55V
Dynamic dV/dT Rating 175°C Operating Temperature
RDS(on) max. 0.14
Fast Switching Fully Avalanche Rated
ID 10A
Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular S G design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon D-Pak area. This benefit combined with the fast switching speed and AUIRLR014N ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
G D S
reliable device for use in Automotive and a wide variety of other Gate Drain Source applications.
Standard Pack Base part number Package Type Orderable Part Number Form Quantity
Tube 75 AUIRLR014N AUIRLR014N D-Pak Tape and Reel Left 3000 AUIRLR014NTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.1 A IDM Pulsed Drain Current 40 PD @TC = 25°C Maximum Power Dissipation 28 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy (Thermally Limited) 35 mJ IAR Avalanche Current 6.0 A EAR Repetitive Avalanche Energy 2.8 mJ dv/dt Peak Diode Recovery 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 5.3 RJA Junction-to-Ambient ( PCB Mount) °C/W ––– 50 RJA Junction-to-Ambient ––– 110 HEXFET® is a registered trademark of Infineon.
*
Qualification standards can be found at www.infineon.com 1 2015-12-11
AUIRLR014N
Features
Advanced Planar Technology HEXFET® Power MOSFET Logic Level Gate Drive
V
Low On-Resistance
DSS 55V
Dynamic dV/dT Rating 175°C Operating Temperature
RDS(on) max. 0.14
Fast Switching Fully Avalanche Rated
ID 10A
Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular S G design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon D-Pak area. This benefit combined with the fast switching speed and AUIRLR014N ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
G D S
reliable device for use in Automotive and a wide variety of other Gate Drain Source applications.
Standard Pack Base part number Package Type Orderable Part Number Form Quantity
Tube 75 AUIRLR014N AUIRLR014N D-Pak Tape and Reel Left 3000 AUIRLR014NTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.1 A IDM Pulsed Drain Current 40 PD @TC = 25°C Maximum Power Dissipation 28 W Linear Derating Factor 0.2 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy (Thermally Limited) 35 mJ IAR Avalanche Current 6.0 A EAR Repetitive Avalanche Energy 2.8 mJ dv/dt Peak Diode Recovery 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 5.3 RJA Junction-to-Ambient ( PCB Mount) °C/W ––– 50 RJA Junction-to-Ambient ––– 110 HEXFET® is a registered trademark of Infineon.
*
Qualification standards can be found at www.infineon.com 1 2015-12-11