Datasheet LND150, LND250 (Microchip) - 2

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LND150/LND250 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-Source Voltage .. BVDSX Drain-to-Gate Voltage .. BVDGX Gate-to-Source Voltage ... ±20V Operating Ambient Temperature, TA .. –55°C to 150°C Storage Temperature, TS ... –55°C to 150°C 
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 
DC ELECTRICAL CHARACTERISTICS Electrical Specifications:
TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter Sym. Min. Typ. Max. Unit Conditions
Drain-to-Source Breakdown Voltage BVDSX 500 — — V VGS = –10V, ID = 1 mA Gate-to-Source Off Voltage VGS(OFF) –1 — –3 V VGS = 25V, ID = 100 nA Change in VGS(OFF) with Temperature ∆VGS(OFF) — — 5 mV/°C VGS = 25V, ID = 100 nA (
Note 1
) Gate Body Leakage Current IGSS — — 100 nA VGS = ±20V, VDS = 0V — — 100 nA VGS = –10V, VDS = 450V Drain-to-Source Leakage Current I VDS = 0.8V Maximum rating, D(OFF) — — 100 µA VGS = –10V, TA= 125°C (
Note 1
) Saturated Drain-to-Source Current IDSS 1 — 3 mA VGS = 0V, VDS = 25V Static Drain-to-Source On-State Resistance RDS(ON) — 850 1000 Ω VGS = 0V, ID = 0.5 mA V Change in R GS = 0V, ID = 0.5 mA DS(ON) with Temperature ∆RDS(ON) — — 1.2 %/°C (
Note 1
)
Note 1:
Specification is obtained by characterization and is not 100% tested. DS20005454A-page 2  2018 Microchip Technology Inc. Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service