Datasheet BCP56 (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | NPN Silicon Epitaxial Transistor |
| 页数 / 页 | 6 / 4 — BCP56 Series. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 6. Base Emitter … |
| 修订版 | 14 |
| 文件格式/大小 | PDF / 71 Kb |
| 文件语言 | 英语 |
BCP56 Series. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 6. Base Emitter Voltage vs. Collector
该数据表的模型线
文件文字版本
BCP56 Series TYPICAL ELECTRICAL CHARACTERISTICS
1.2 1.0 TS) T 1.1 V J = 25°C CE = 2 V AGE (V) 1.0 0.8 T 0.9 −55°C TAGE (VOL I 50 C = 10mA 100mA 0.6 250mA 500mA 0.8 mA 25°C 0.7 0.4 0.6 OR‐EMITTER VOL 0.5 150°C , BASE−EMITTER VOL 0.2 0.4 on) 0.3 , COLLECT BE(V 0 0.2 CEV 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.001 0.01 0.1 1 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector Figure 7. Collector Saturation Region Current
1 1.6 1 mS 1 S 1.4 1.2 100 mS TION (W) 10 mS A 1.0 0.1 0.8 OR CURRENT (A) 0.6 , POWER DISSIP 0.4 DP , COLLECT I C 0.2 0.01 0.0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 T V A, AMBIENT TEMPERATURE (°C) CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area Figure 9. Power Derating Curve www.onsemi.com 4
1.2 1.0 TS) T 1.1 V J = 25°C CE = 2 V AGE (V) 1.0 0.8 T 0.9 −55°C TAGE (VOL I 50 C = 10mA 100mA 0.6 250mA 500mA 0.8 mA 25°C 0.7 0.4 0.6 OR‐EMITTER VOL 0.5 150°C , BASE−EMITTER VOL 0.2 0.4 on) 0.3 , COLLECT BE(V 0 0.2 CEV 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.001 0.01 0.1 1 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector Figure 7. Collector Saturation Region Current
1 1.6 1 mS 1 S 1.4 1.2 100 mS TION (W) 10 mS A 1.0 0.1 0.8 OR CURRENT (A) 0.6 , POWER DISSIP 0.4 DP , COLLECT I C 0.2 0.01 0.0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 T V A, AMBIENT TEMPERATURE (°C) CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area Figure 9. Power Derating Curve www.onsemi.com 4