Datasheet BCP56 (ON Semiconductor) - 3

BCP56 Series TYPICAL ELECTRICAL CHARACTERISTICS
1000 VCE = 2 V TA = 150°C GAIN 125°C 25°C 100 - 55°C - 65°C , DC CURRENT FEh 100.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000 80 (MHz) 60 TJ = 25°C 40 Cibo ANCE (pF) 20 100 ACIT C, CAP 10 ‐GAIN — BANDWIDTH PRODUCT 8.0 6.0 Cobo 10 4.0 f, CURRENT T 1.0 10 100 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance
1 1.2 IC/IB = 10 1.1 I 150°C C/IB = 10 1.0 25°C 0.9 AGE (V) AGE (V) T T −55°C 0.8 OR−EMITTER 0.1 −55°C 0.7 25°C 0.6 TION VOL , BASE−EMITTER TION VOL , COLLECT sat) 0.5 TURA 150°C BE( TURA V 0.4 SA SA CE(sat)V 0.3 0.01 0.2 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current www.onsemi.com 3