Datasheet BCP56 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | NPN Silicon Epitaxial Transistor |
| 页数 / 页 | 6 / 2 — BCP56 Series. ELECTRICAL CHARACTERISTICS. Characteristics. Symbol. Min. … |
| 修订版 | 14 |
| 文件格式/大小 | PDF / 71 Kb |
| 文件语言 | 英语 |
BCP56 Series. ELECTRICAL CHARACTERISTICS. Characteristics. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BCP56 Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Base Breakdown Voltage V(BR)CBO 100 − − Vdc (IC = 100 mAdc, IE = 0) Collector−Emitter Breakdown Voltage V(BR)CEO 80 − − Vdc (IC = 1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current ICBO − − 100 nAdc (VCB = 30 Vdc, IE = 0) Emitter−Base Cutoff Current IEBO − − 10 mAdc (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 3) DC Current Gain hFE − (IC = 5.0 mA, VCE = 2.0 V) All Part Types 25 − − (IC = 150 mA, VCE = 2.0 V) BCP56 40 − 250 BCP56−10 63 − 160 BCP56−16 100 − 250 (IC = 500 mA, VCE = 2.0 V) All Types 25 − − Collector−Emitter Saturation Voltage VCE(sat) − − 0.5 Vdc (IC = 500 mAdc, IB = 50 mAdc) Base−Emitter On Voltage VBE(on) − − 1.0 Vdc (IC = 500 mAdc, VCE = 2.0 Vdc)
SWITCHING CHARACTERISTICS
Rise Time tr − 14 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) Delay Time td − 9 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) Storage Time ts − 714 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA) Fall Time tf − 58 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT − 130 − MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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BCP56 Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Base Breakdown Voltage V(BR)CBO 100 − − Vdc (IC = 100 mAdc, IE = 0) Collector−Emitter Breakdown Voltage V(BR)CEO 80 − − Vdc (IC = 1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (IE = 10 mAdc, IC = 0) Collector−Base Cutoff Current ICBO − − 100 nAdc (VCB = 30 Vdc, IE = 0) Emitter−Base Cutoff Current IEBO − − 10 mAdc (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
(Note 3) DC Current Gain hFE − (IC = 5.0 mA, VCE = 2.0 V) All Part Types 25 − − (IC = 150 mA, VCE = 2.0 V) BCP56 40 − 250 BCP56−10 63 − 160 BCP56−16 100 − 250 (IC = 500 mA, VCE = 2.0 V) All Types 25 − − Collector−Emitter Saturation Voltage VCE(sat) − − 0.5 Vdc (IC = 500 mAdc, IB = 50 mAdc) Base−Emitter On Voltage VBE(on) − − 1.0 Vdc (IC = 500 mAdc, VCE = 2.0 Vdc)
SWITCHING CHARACTERISTICS
Rise Time tr − 14 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) Delay Time td − 9 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA) Storage Time ts − 714 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA) Fall Time tf − 58 − ns (VCC = 30 Vdc, IC = 150 mA, IB1 = 15 mA, IB2 = 15 mA)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT − 130 − MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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