Preliminary Datasheet ZHB6790 (Diodes) - 4

ZHB6790 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V(BR)CBO 50 V IC=100µA Voltage Collector-Emitter V(BR)CEO 40 V IC=10mA* Breakdown Voltage Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA Voltage Collector Cutoff Current ICBO 0.1 µA VCB=35V Emitter Cutoff Current IEBO 0.1 µA VEB=4V Collector-Emitter VCE(sat) 0.1 V IC=100mA, IB=0.5mA* Saturation Voltage 0.16 V IC=500mA, IB=2.5mA* 0.5 V IC=1A, IB=5mA* 0.35 V IC=2A, IB=30mA* Base-Emitter VBE(sat) 0.9 V IC=1A, IB=10mA* Saturation Voltage Base-Emitter VBE(on) 0.73 V IC=1A, VCE=2V* Turn-On Voltage Static Forward Current hFE 500 IC=100mA, VCE=2V* Transfer Ratio 400 IC=1A, VCE=2V* 150 IC=2A, VCE=2V* Transition Frequency fT 150 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 16 pF VCB=10V, f=1MHz Switching Times ton 33 ns IC=500mA, IB!=50mA toff 1300 IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.