Datasheet BLF974P (Ampleon) - 7
| 制造商 | Ampleon |
| 描述 | HF / VHF power LDMOS transistor |
| 页数 / 页 | 18 / 7 — BLF974P. HF / VHF power LDMOS transistor. 7.4 Graphical data. 7.4.1 … |
| 文件格式/大小 | PDF / 1.7 Mb |
| 文件语言 | 英语 |
BLF974P. HF / VHF power LDMOS transistor. 7.4 Graphical data. 7.4.1 1-Tone CW pulsed. Fig 5
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BLF974P HF / VHF power LDMOS transistor 7.4 Graphical data 7.4.1 1-Tone CW pulsed
amp01216 amp01217 27 90 62 Gp G ηD PL Ideal P Ideal P Ideal P (dB) (dB) (dB) (%) (%) (%) (dBm) (dBm) (dBm) L 25 70 60 G (2) (2) (2) p G (1) (1) (1) 23 50 58 PL P ηD 21 30 56 19 10 54 0 100 200 300 400 500 600 700 30 31 32 33 34 35 36 PL (W) Pi (dBm) VDS = 50 V; IDq = 2 50 mA; f = 225 MHz; tp = 100 s; VDS = 50 V; IDq = 2 50 mA; f = 225 MHz; tp = 100 s; = 10 %. = 10 %. (1) PL(1dB) = 57.78 dBm (600 W) (2) PL(3dB) = 58.09 dBm (645 W)
Fig 5. Power gain and drain efficiency as function of Fig 6. Output power as a function of input power; output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 7 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
amp01216 amp01217 27 90 62 Gp G ηD PL Ideal P Ideal P Ideal P (dB) (dB) (dB) (%) (%) (%) (dBm) (dBm) (dBm) L 25 70 60 G (2) (2) (2) p G (1) (1) (1) 23 50 58 PL P ηD 21 30 56 19 10 54 0 100 200 300 400 500 600 700 30 31 32 33 34 35 36 PL (W) Pi (dBm) VDS = 50 V; IDq = 2 50 mA; f = 225 MHz; tp = 100 s; VDS = 50 V; IDq = 2 50 mA; f = 225 MHz; tp = 100 s; = 10 %. = 10 %. (1) PL(1dB) = 57.78 dBm (600 W) (2) PL(3dB) = 58.09 dBm (645 W)
Fig 5. Power gain and drain efficiency as function of Fig 6. Output power as a function of input power; output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 7 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents