Preliminary Datasheet MB85RS4MTY (Fujitsu) - 9

制造商Fujitsu
描述Memory FRAM 4M (512 K х 8) Bit SPI
页数 / 页39 / 9 — MB85RS4MTY. RDSR. WRSR
文件格式/大小PDF / 2.6 Mb
文件语言英语

MB85RS4MTY. RDSR. WRSR

MB85RS4MTY RDSR WRSR

该数据表的模型线

文件文字版本

MB85RS4MTY RDSR
The RDSR command reads status register data. After op-code of RDSR is input to SI, 8-cycle clock is input to SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. In the RDSR command, repeated reading of status register is enabled by sending SCK continuously before rising of CS. CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK SI 0 0 0 0 0 1 0 1 Invalid Data Out High-Z SO Invalid MSB LSB
WRSR
The WRSR command writes data to the nonvolatile memory bit of status register. After performing WRSR op-code to a SI pin, 8 bits writing data is input. WEL (Write Enable Latch) is not able to be written with WRSR command. A SI value correspondent to bit 1 is ignored. Bit 0 of the status register is fixed to “0” and cannot be written. The SI value corresponding to bit 0 is ignored. WP signal level shall be fixed before performing WRSR command, and do not change the WP signal level until the end of command sequence. CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Instruction Data In SI 0 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0 MSB LSB High-Z SO DS501-00065-0v1-E 9 Document Outline DESCRIPTION FEATURES PIN ASSIGNMENT PIN FUNCTIONAL DESCRIPTIONS BLOCK DIAGRAM SPI MODE SERIAL PERIPHERAL INTERFACE (SPI) STATUS REGISTER OP-CODE COMMAND BLOCK PROTECT WRITING PROTECT ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS 1. DC Characteristics 2. AC Characteristics 3. Pin Capacitance TIMING DIAGRAM POWER ON/OFF SEQUENCE FRAM CHARACTERISTICS NOTE ON USE ESD AND LATCH-UP REFLOW CONDITIONS AND FLOOR LIFE Current status on Contained Restricted Substances ORDERING INFORMATION PACKAGE DIMENSION MARKING (Example) PACKING INFORMATION 1. Tube 2. Emboss Tape