Datasheet ZXTP56060FDBQ (Diodes) - 4

ZXTP56060FDBQ Electrical Characteristics – Q1 & Q2
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -60 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -60 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 — — V IE = -100µA — — -100 Collector-Base Cutoff Current nA V I CB = -48V, IE = 0 CBO — — -50 µA VCB = -48V, IE = 0, TA = +150°C Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5.6V, IC = 0 170 — — VCE = -2V, IC = -100mA 140 — — DC Current Gain (Note 11) V h CE = -2V, IC = -500mA FE — 110 — — VCE = -2V, IC = -1A 50 — — VCE = -2V, IC = -2A — — -120 IC = -500mA, IB = -50mA — — -250 I Collector-Emitter Saturation Voltage (Note 11) C = -1A, IB = -50mA VCE(sat) mV — — -420 IC = -0.7A, IB = -7mA — — -450 IC = -2A, IB = -200mA Equivalent On-Resistance (Note 11) RCE(sat) — — 250 mΩ IE = -1A, IB = -50mA — — -1 IC = -0.5A, IB = -50mA Base-Emitter Saturation Voltage (Note 11) VBE(sat) — — -1 V IC = -1A, IB = -50mA — — -1.25 IC = -2A, IB = -200mA Base-Emitter Turn-on Voltage (Note 11) VBE(on) — — -0.9 V VCE = -2V, IC = -0.5A Turn-On Time ton — 90 — ns IC = -1A, IB1 = -IB2 = 50mA; Delay Time td — 10 — ns TA = +25°C Rise Time tr — 80 — ns Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤2%. ZXTP56060FDBQ 4 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
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© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout