Datasheet ZXTP56060FDBQ (Diodes) - 3
| 制造商 | Diodes |
| 描述 | 60V Dual PNP LOW VCE(sat) Transistor |
| 页数 / 页 | 8 / 3 — ZXTP56060FDBQ. Thermal Characteristics and Derating Information. Derating … |
| 文件格式/大小 | PDF / 502 Kb |
| 文件语言 | 英语 |
ZXTP56060FDBQ. Thermal Characteristics and Derating Information. Derating Curve. Transient Thermal Impedance
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ZXTP56060FDBQ Thermal Characteristics and Derating Information
) 2.5 (W Notes 7 & 9 2.0 ion Notes 7 & 8 1.5 Notes 6 & 8 Dissipat 1.0 er Notes 6 & 9 0.5 Pow ax M 0.0 0 20 40 60 80 100 120 140 160 Temperature (oC)
Derating Curve
330 100 300 C/W) o 270 T =25oC A (W 240 e ( See Notes 6 & 8 Single Pulse er 210 10 T =25oC A 180 D=0.5 See Notes 6 & 8 istanc Pow 150 es 120 um 1 R 90 D=0.2 Single Pulse im al m 60 ax D=0.05 30 D=0.1 M Ther 0 0.1 100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
80 100 ) 70 T =25oC C/W) A o 60 See Notes 7 & 8 (W e ( er Single Pulse 50 D=0.5 T =25oC A 40 istanc Pow 10 See Notes 7 & 8 es 30 um D=0.2 Single Pulse R im al 20 D=0.05 ax m 10 M D=0.1 Ther 0 1 100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
ZXTP56060FDBQ 3 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout
) 2.5 (W Notes 7 & 9 2.0 ion Notes 7 & 8 1.5 Notes 6 & 8 Dissipat 1.0 er Notes 6 & 9 0.5 Pow ax M 0.0 0 20 40 60 80 100 120 140 160 Temperature (oC)
Derating Curve
330 100 300 C/W) o 270 T =25oC A (W 240 e ( See Notes 6 & 8 Single Pulse er 210 10 T =25oC A 180 D=0.5 See Notes 6 & 8 istanc Pow 150 es 120 um 1 R 90 D=0.2 Single Pulse im al m 60 ax D=0.05 30 D=0.1 M Ther 0 0.1 100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
80 100 ) 70 T =25oC C/W) A o 60 See Notes 7 & 8 (W e ( er Single Pulse 50 D=0.5 T =25oC A 40 istanc Pow 10 See Notes 7 & 8 es 30 um D=0.2 Single Pulse R im al 20 D=0.05 ax m 10 M D=0.1 Ther 0 1 100μµ 1m 10m 100m 1 10 100 1k 100μµ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Pulse Power Dissipation
ZXTP56060FDBQ 3 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout