Datasheet ZXTP56060FDBQ (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 60V Dual PNP LOW VCE(sat) Transistor |
| 页数 / 页 | 8 / 2 — ZXTP56060FDBQ. Absolute Maximum Ratings – Q1 & Q2. Characteristic. … |
| 文件格式/大小 | PDF / 502 Kb |
| 文件语言 | 英语 |
ZXTP56060FDBQ. Absolute Maximum Ratings – Q1 & Q2. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings
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文件文字版本
ZXTP56060FDBQ Absolute Maximum Ratings – Q1 & Q2
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Base Current IB -300 mA Peak Base Current IBM -1 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Notes 5 & 7) 405 Power Dissipation (Notes 5 & 8) 510 PD mW (Notes 6 & 7) 1650 (Notes 6 & 8) 2470 (Notes 5 & 7) 308 Thermal Resistance, Junction to Ambient (Notes 5 & 8) 245 RθJA °C/W (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) RθJL 18 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge – Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under stil air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted with the collector pad on 28mm × 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with two active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP56060FDBQ 2 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Base Current IB -300 mA Peak Base Current IBM -1 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Notes 5 & 7) 405 Power Dissipation (Notes 5 & 8) 510 PD mW (Notes 6 & 7) 1650 (Notes 6 & 8) 2470 (Notes 5 & 7) 308 Thermal Resistance, Junction to Ambient (Notes 5 & 8) 245 RθJA °C/W (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) RθJL 18 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge – Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under stil air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted with the collector pad on 28mm × 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with two active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP56060FDBQ 2 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout