Datasheet FZT789A (Diodes) - 2

A Product Line of Diodes Incorporated FZT789A Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -6 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 6) 3.0 (Note 7) 2.0 Power Dissipation PD W (Note 8) 1.6 (Note 9) 1.2 (Note 6) 41.7 (Note 7) 62.5 Thermal Resistance, Junction to Ambient RJA (Note 8) 78.1 °C/W (Note 9) 104 Thermal Resistance Junction to Lead (Note 10) RJL 12.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 11)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper. 8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 9. Same as Note 6, except the device is mounted on minimum recommended pad layout. 10. Thermal resistance from junction to solder-point (at the end of the collector lead). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT789A 2 of 7 April 2015 Document Number DS33168 Rev. 6 - 2
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