Datasheet SiRA99DP (Vishay) - 3
| 制造商 | Vishay |
| 描述 | P-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 9 / 3 — SiRA99DP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| 文件格式/大小 | PDF / 251 Kb |
| 文件语言 | 英语 |
SiRA99DP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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SiRA99DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 250 10000 160 200 ) V = 10 V thru 4 V ) GS 1000 1000 120 150 rrent (A ne ne rrent (A ine u ne ne ine u C C n 1st li 2nd li n 2nd l 1st li 2nd li 80 2nd l rai 100 rai D T = 25 °C 100 D C - 100 - I D I D 40 50 V = 3 V GS T = 125 °C C T = -55 °C C V = 2 V GS 0 10 0 10 0 1 2 3 4 5 0 1 2 3 4 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.0040 10000 100 000 10000 ) 0.0034 Ω Ciss 1000 10 000 1000 (pF) 0.0028 V = 4.5 V GS Coss ne ne ne ine ne ine tance Resistance ( 1st li n- 2nd li 2nd l 1st li 2nd li 0.0022 2nd l O apaci - 100 C 1000 100 (on) V = 10 V GS C - C S rss D 0.0016 R 0.0010 10 100 10 0 40 80 120 160 200 0 6 12 18 24 30 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 1.6 10000 ) I = 20 A d) D e (V 8 liz 1.4 a V = 10 V, 20 A GS ltage o 1000 1000 6 1.2 ne ne ne ine ne ine ource V 1st li 2nd li 1st li 2nd l 2nd li 4 2nd l 1.0 V = 10 V, 15 V, 20 V 100 100 ate-to-S DS n-Resistance (Norm V = 4.5 V, 15 A GS G O - - 2 ) 0.8 n GSV DS(oR 0 10 0.6 10 0 36 72 108 144 180 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
S19-0115-Rev. A, 04-Feb-2019
3
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 250 10000 160 200 ) V = 10 V thru 4 V ) GS 1000 1000 120 150 rrent (A ne ne rrent (A ine u ne ne ine u C C n 1st li 2nd li n 2nd l 1st li 2nd li 80 2nd l rai 100 rai D T = 25 °C 100 D C - 100 - I D I D 40 50 V = 3 V GS T = 125 °C C T = -55 °C C V = 2 V GS 0 10 0 10 0 1 2 3 4 5 0 1 2 3 4 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.0040 10000 100 000 10000 ) 0.0034 Ω Ciss 1000 10 000 1000 (pF) 0.0028 V = 4.5 V GS Coss ne ne ne ine ne ine tance Resistance ( 1st li n- 2nd li 2nd l 1st li 2nd li 0.0022 2nd l O apaci - 100 C 1000 100 (on) V = 10 V GS C - C S rss D 0.0016 R 0.0010 10 100 10 0 40 80 120 160 200 0 6 12 18 24 30 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 1.6 10000 ) I = 20 A d) D e (V 8 liz 1.4 a V = 10 V, 20 A GS ltage o 1000 1000 6 1.2 ne ne ne ine ne ine ource V 1st li 2nd li 1st li 2nd l 2nd li 4 2nd l 1.0 V = 10 V, 15 V, 20 V 100 100 ate-to-S DS n-Resistance (Norm V = 4.5 V, 15 A GS G O - - 2 ) 0.8 n GSV DS(oR 0 10 0.6 10 0 36 72 108 144 180 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
S19-0115-Rev. A, 04-Feb-2019
3
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000