Datasheet SiRA99DP (Vishay) - 4
| 制造商 | Vishay |
| 描述 | P-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 9 / 4 — SiRA99DP. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| 文件格式/大小 | PDF / 251 Kb |
| 文件语言 | 英语 |
SiRA99DP. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. Threshold Voltage
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SiRA99DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 1.0 10000 I = 250 μA D 0.7 ) 10 ) (A 1000 1000 0.4 rrent nce (V u ne ne a ne ine T = 150 °C T = 25 °C ne ine 1 J J ari I = 5 mA 1st li V D 2nd li 1st li 2nd l - 2nd li 2nd l ) 0.1 ource C 100 (th S 100 - GS 0.1 V I S -0.2 0.01 10 -0.5 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Drain Voltage (V) SD T - Junction Temperature (°C) J
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.010 10000 500 10000 I = 20 A D ) 0.008 400 Ω 1000 ) 1000 0.006 (W 300 ne ne ine ine ne ne er Resistance ( ow 1st li n- 2nd li 2nd l P 1st li 0.004 2nd l 2nd li O 200 - - P ) 100 100 n T = 125 °C J DS(o 0.002 R 100 T = 25 °C J 0 10 0 10 0 2 4 6 8 10 0.001 0.01 0.1 1 10 V - Gate-to-Source Voltage (V) GS t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I limited DM 100 μs 100 I limited ) D 1 ms 1000 10 rrent (A 10 ms ne ne ine u C n 1st li 100 ms 2nd li 2nd l 1 rai Limited by R a D DS(on) 100 - 1 s I D 10 s 0.1 DC T = 25 °C, A single pulse BVDSS limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-0115-Rev. A, 04-Feb-2019
4
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 1.0 10000 I = 250 μA D 0.7 ) 10 ) (A 1000 1000 0.4 rrent nce (V u ne ne a ne ine T = 150 °C T = 25 °C ne ine 1 J J ari I = 5 mA 1st li V D 2nd li 1st li 2nd l - 2nd li 2nd l ) 0.1 ource C 100 (th S 100 - GS 0.1 V I S -0.2 0.01 10 -0.5 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Drain Voltage (V) SD T - Junction Temperature (°C) J
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.010 10000 500 10000 I = 20 A D ) 0.008 400 Ω 1000 ) 1000 0.006 (W 300 ne ne ine ine ne ne er Resistance ( ow 1st li n- 2nd li 2nd l P 1st li 0.004 2nd l 2nd li O 200 - - P ) 100 100 n T = 125 °C J DS(o 0.002 R 100 T = 25 °C J 0 10 0 10 0 2 4 6 8 10 0.001 0.01 0.1 1 10 V - Gate-to-Source Voltage (V) GS t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I limited DM 100 μs 100 I limited ) D 1 ms 1000 10 rrent (A 10 ms ne ne ine u C n 1st li 100 ms 2nd li 2nd l 1 rai Limited by R a D DS(on) 100 - 1 s I D 10 s 0.1 DC T = 25 °C, A single pulse BVDSS limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS
Safe Operating Area, Junction-to-Ambient Note
a. VGS > minimum VGS at which RDS(on) is specified S19-0115-Rev. A, 04-Feb-2019
4
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000