Datasheet AP22652, AP22653, AP22652A, AP22653A (Diodes) - 5

AP22652/AP22653/AP22652A/AP22653A Electrical Characteristics
(@TA = +25°C, VIN = 3.0V to 5.5V, VEN = 0V or VEN = VIN, RFAULT = 10kΩ, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 8) Min Typ Max Unit Supply
VUVLO Input UVLO VIN Rising — 2.65 2.95 V VUVLO Input UVLO Hysteresis VIN Decreasing — 65 — mV ISHDN Input Shutdown Current VIN = 5.5V, Disabled, OUT = Open — 0.1 1 µA VIN = 5.5V, Enabled, OUT = Open, RLIM = 20kΩ — 140 160 µA IQ Input Quiescent Current VIN = 5.5V, Enabled, OUT = Open, RLIM = 210kΩ — 120 140 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5.5V, IREV at VIN — 0.01 1 µA
Power Switch
TJ = +25°C, VIN = 5.0V — 65 90 SOT26 (Type A1) Package -40°C ≤ TA ≤ +85°C — — 135 RDS(ON) Switch On-Resistance mΩ W-DFN2020-6 (Type A1) TJ = +25°C, VIN = 5.0V — 65 90 Package -40°C ≤ TA ≤ +85°C — — 135 VIN = 5.5V, CL = 1µF, RLOAD = 100Ω. See Figure 1 — 0.5 1.5 ms tR Output Turn-On Rise Time VIN = 3.0V, CL = 1µF, RLOAD = 100Ω — 0.3 1 ms VIN = 5.5V, CL = 1µF, RLOAD = 100Ω. See Figure 1 0.1 — 0.5 ms tF Output Turn-Off Fall Time VIN = 3.0V, CL = 1µF, RLOAD = 100Ω 0.1 — 0.5 ms
Current Limit
TA = +25°C 2478 2665 2852 RLIM = 10kΩ -40°C ≤ TA ≤ +85°C 2398 2665 2931 TA = +25°C 1614 1735 1856 RLIM = 15kΩ -40°C ≤ TA ≤ +85°C 1561 1735 1908 Current-Limit Threshold TA = +25°C 1196 1286 1376 ILIMIT (Maximum DC Output Current), RLIM = 20kΩ mA V -40°C ≤ TA ≤ +85°C 1157 1286 1414 IN = 5V, VOUT = 4.5V TA = +25°C 456 490 524 RLIM = 49.9kΩ -40°C ≤ TA ≤ +85°C 441 490 539 RLIM = 210kΩ TA = +25°C 95 125 155 RLIM Shorted to GND 40 80 120 RLIM = 10kΩ, TA = +25°C — 700 — RLIM = 15kΩ, TA = +25°C — 470 — Short-Circuit Current Limit, OUT RLIM = 20kΩ, TA = +25°C — 350 — ISHORT mA Connected to GND RLIM = 49.9kΩ, TA = +25°C — 140 — RLIM = 210kΩ, TA = +25°C — 35 — RLIM Shorted to GND, TA = +25°C — 80 —
Enable Pin
ILEAK-EN EN Input Leakage Current VIN = 5V, VEN = 0V and 5.5V -2 — 2 µA tON Turn-On Time CL = 1µF, RL = 100Ω. See Figure 1 — — 4 ms tOFF Turn-Off Time CL = 1µF, RL = 100Ω. See Figure 1 — — 1 ms
Output Discharge
RDIS Discharge Resistance (Note 9) VIN = 5V, Disabled, IOUT = 1mA — 600 — Ω Notes: 8. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 9. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO). The discharge function offers a resistive discharge path for the external storage capacitor for limited time. AP22652/AP22653/AP22652A/AP22653A 5 of 17 July 2020 Document number: DS41186 Rev. 2 - 2
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